Transistor bipolare BJT Toshiba 2SA1943-O
20005
Transistor bipolare BJT Toshiba 2SA1943-O
Characteristics
- Manufacturer: Toshiba
- Product Category: Bipolar Transistors - BJT
- Technology: Yes
- Mounting Style: Through Hole
- Package/involucro: TO-3P-3
- Transistor polarity : PNP
- Configuration: Single
- Maximum DC collector current: 15A
- Collector-emitter voltage VCEO Max: 230 V
- VCBO base-collector voltage: 230 V
- Emitter-base voltage VEBO: 5 V
- Collector-emitter saturation voltage: 1.5 V
- Pd - Power dissipation: 150W
- Gain-bandwidth product fT: 30 MHz
- Minimum working temperature
- Maximum working temperature: + 150 C
- Series: 2NT
- Marchio: Toshiba
- Collector DC current: 15 A
- DC Collector/Base Gain hfe Min: 55
- DC current gain hFE max: 160
- Height: 26 mm
- Length: 20.5 mm
- Product Type: BJTs - Bipolar Transistors
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